PZT piezoelectric film deposition

The PZT film-forming equipment is imported (ULVAC SME200), capable of mass-producing 8-inch PZT piezoelectric films. The related process capabilities are at an internationally advanced level, and the process technology parameters are independently controllable.

Product Details

PZT performance and processing characteristics

Growth temperature
PZT film growth thickness: 5~5µm, uniformity ±2%
PZT piezoelectric properties: e31~14.9C/m2
PZT stress
Thin film breakdown voltage: Vbreakdown ~ 40V/um

PZT growth on different substrates

Single-polished & double-polished silicon wafers
SOI silicon wafer
Cavity SOI silicon wafer
Silicon photonics wafer substrate
Glass/Stainless Steel/ITO

PZT wafers

A piezoelectric element is formed by clamping a ferroelectric material of several µm with a noble metal electrode.

Process structure: TiOx/Pt/Buffer/PZT/Pt.

ULVAC's sputtering equipment can stably deposit world-class PZT sputtered films. (CMOS film deposition corresponds to PZT deposition temperature

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sputtering performance

No.	Spec.
1	Ti film thickness Uniformity Within ±5%
2	LNO film thickness Uniformity Within ±10%
3	PZT film thickness Uniformity Within ±5%
4	PZT deposition rate > 4 μm/h (measured at film thickness 1 μm)
5	PZT Deposition Temperature
6	Film stack PZT/buffer:
7	Surface roughness




8	\|e₃₁, f\| > 13.0 C/m² (1 μm) Measure 1 point (center) for each wafer
9	\|e₃₁, f\| uniformity ±10% Measure 5 points for each wafer
9	(±5%+5%Measurement error=10%) ※Edge ex. 10mm
10	Breakdown voltage > \|-40 V\| Measure 3 points (Center, Middle, Edge) for each wafer ※Edge ex. 10 mm
11	Dielectric constant: Data submission
12	Dielectric loss
13	Piezoelectric fatigue after 1E+10cycles e31 Degradation