CVD thin film deposition (Si₃N₄ SiO₂)

PECVD Oxford PlasmaPro 100

Specifically designed for producing high-speed thin films with excellent uniformity, our plasma cleaning process allows for control over film properties such as refractive index, stress, electrical properties, and wet chemical etching rate. Our process features endpoint control, eliminating or reducing the need for physical/chemical chamber cleaning.

High-quality silicon nitride and silicon dioxide PECVD for optoelectronics, dielectric layers, passivation, and many other applications.

High-quality SiO for a variety of applications_x, SiN_xand SiO_xN_andsediment

8-inch SiO_x Film formation

8-inch SiN_x Film formation