CVD薄膜沉积（Si₃N₄ SiO₂）

PECVD Oxford PlasmaPro 100

专门设计用于生产均匀度极佳的高速薄膜，并可控制薄膜特性，如折射率、应力、电特性和湿化学蚀刻率。我们的等离子体清洗工艺具有终点控制功能，可消除或减少对物理/化学腔室清洗的需求。

用于光电子、介质层、钝化和许多其他用途的高质量氮化硅和二氧化硅PECVD

用于各种应用的高质量SiO_x, SiN_x和SiO_xN_y沉积

8英寸SiO_x成膜

8英寸SiN_x成膜

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产品详情

SiO2 Process

Process Gases	SiH₄-N₂-N₂O
Deposition Temperature	>300ºC
Clean Gases	CF₄-N₂O
Wafer Size/Batch size	up to 200mm
Deposition rate	> 40nm/min
Film Thickness Uniformity within-wafer	<±2% (100mm) <±3% (150mm) <±4% (200mm)
Wafer to wafer repeatability	<±3%
Refractive Index (measured at 632.8nm)	1.46 (controllable 1.46~1.50)
RI Uniformity	<±0.01
RI Repeatability	<±0.01
Film Stress	<-300MPa with RI = 1.46 <-100MPa with RI = 1.50

Process Gases	SiH₄-N₂-NH₃
Deposition Temperature	>300ºC
Clean Gases	CF₄-N₂O
Wafer Size	up to 200mm
Deposition rate	> 10nm/min
Film Thickness Uniformity within-wafer	<±2% (100mm) <±3% (150mm) <±4% (200mm)
Wafer to wafer repeatability	<±3%
Refractive Index (measured at 632.8nm)	1.98 (controllable 1.98~2.01)
RI Uniformity	<±0.01
RI Repeatability	<±0.01
Film Stress	< +/-300 MPa (Dual frequency (13.56MHz and 100kHz))