ICP plasma etching beam etching

High-density inductively coupled plasma enables rapid etching rates. This process module offers excellent uniformity, high throughput, high precision, and low-damage processing, suitable for wafers up to 200 mm in size.

• Extensive library of metal etching processes: aluminum, chromium, nickel, platinum, etc.
• SiOx and SiO2 etching
• Fused quartz and quartz etching
• Silicon etching
• SiO2 and SiNx hard mask etching